Wide bandgap oxides

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Carrier generation in multicomponent wide-bandgap oxides: InGaZnO4.

To exploit the full potential of multicomponent wide-bandgap oxides, an in-depth understanding of the complex defect chemistry and of the role played by the constituent oxides is required. In this work, thorough theoretical and experimental investigations are combined in order to explain the carrier generation and transport in crystalline InGaZnO4. Using first-principles density functional appr...

متن کامل

Wide Bandgap Composite EBG Substrates

High-K ceramics are embedded into a polymer host to create an electromagnetic bandgap (EBG) substrate that possess superior properties to previous bandgap implementations in terms of stopband width, attenuation per layer, and practicality. Ceramics are periodically spaced in a commercially-available, Teflon-based host to create a bandgap that spans from 12.1 to 24.1 GHz. Miniature dielectric ro...

متن کامل

Wide Bandgap GaN Smart Power Chip Technology

Smart power chip technology has been realized on the GaN-on-Si platform, featuring monolithically integrated power devices, digital and analog functional blocks. In particular, this paper presents the imperative analog functional block – the voltage reference generator for smart power applications with wide-temperature-range stability. These circuits are shown to be capable of proper functions ...

متن کامل

Wide Bandgap Heterojunctions on Crystalline Silicon

We describe the use of organic and metal oxide semiconductors to form wide-bandgap heterojunctions to crystalline silicon. We use these semiconductors to demonstrate a heterojunction which both blocks electrons and passes holes, and a complementary heterojunction which blocks holes and passes electrons and blocks holes. The carrier transport functions are demonstrated through simple device stru...

متن کامل

Ultrafast Spectroscopy of Wide Bandgap Semiconductor Nanostructures

Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue lightemitting diodes (LEDs) by Shuji Nakamura and coworkers, the fabrication of highly efficient white LEDs has passed successful developments. A serious physical issue still remained, which prevents their use for high pow...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: APL Materials

سال: 2019

ISSN: 2166-532X

DOI: 10.1063/1.5091688